Study of Physical Properties and Modelling of Sio and V205 Sandwich Devices

Sarkar, Md. Jamshed Ali

dc.contributor.advisor	Sarkar, M.A.R.
dc.contributor.author	Sarkar, Md. Jamshed Ali
dc.date.accessioned	2022-11-09T07:14:55Z
dc.date.available	2022-11-09T07:14:55Z
dc.date.issued	1996
dc.identifier.uri	http://rulrepository.ru.ac.bd/handle/123456789/910
dc.description	This Thesis is Submitted to the Department of Physics, University of Rajshahi, Rajshahi, Bangladesh for The Degree of Doctor of Philosophy (PhD)	en_US
dc.description.abstract	Electrical measurements have been carried out in Al-SiO-Al unformed and Al-SiO-Cu pre-formed devices having insulator thicknesses in the range 50 nm - 600 nm at ambient and different temperatures and under modest vacuum with the application of DC high fields. The DC conductivity has been explained by normal Poole Frenkel model based on localized conduction. AC measurements have also been carried out in these devices in the frequency range 100 Hz -100 KHz. The measured activation energy and the monotonic increase of conductivity suggest that the conductions mechanis1n operating in these devices are of multiphonon hopping type.	en_US
dc.language.iso	en	en_US
dc.publisher	University of Rajshahi	en_US
dc.relation.ispartofseries	;D1901
dc.subject	Modelling Sandwich Devices of Sio V205	en_US
dc.subject	Physics	en_US
dc.title	Study of Physical Properties and Modelling of Sio and V205 Sandwich Devices	en_US
dc.type	Thesis	en_US